Multiscale Modeling for Application-Oriented Optimization of Resistive Random-Access Memory

Resistive Random Access Memory (RRAM)

RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-theart RRAM device performances, characterization, and modeling techniques are summarized, and the design conside...

Conductance Quantization in Resistive Random Access Memory.

The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory. The RRAM device also exhibits rich electrical, thermal, magnetic, and optic...

Resistive Random Access Memory (ReRAM): A Metal Oxide Memory Cell

We review the recent progress in the ReRAM technology, one of the most promising emerging nonvolatile memories, in which both electronic and electrochemical effects play important roles in the nonvolatile functionalities. We first provide a brief historical overview of the research in this field. We also provide a technological overview and the epoch-making achievements, followed by an account ...

Deposition by radio frequency magnetron sputtering of GaV4S8 thin films for resistive random access memory application

Bipolar resistive switching of chromium oxide for resistive random access memory

This study investigates the resistance switching characteristics of Cr2O3-based resistance random access memory (RRAM) with Pt/Cr2O3/TiN and Pt/Cr2O3/Pt structures. Only devices with Pt/Cr2O3/TiN structure exhibit bipolar switching behavior after the forming process because TiN was able to work as an effective oxygen reservoir but Pt was not. Oxygen migration between Cr2O3 and TiN was observed ...